| Studies on Three—electrode Semiconductor Lasers |
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| 作者姓名： | SUNHongxia LUHongchang |
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| 作者单位： | SouthwestJiaotongUniversity,Chengdu610031,CHN |
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| 摘 要： | Using the ray trace method,three-section semiconductor lasers are studied .An analytic expression of output power for the three-section semiconductor lasers is derived for the first time.Frome this expression,threshold condition is also obtained.
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| 关 键 词： | 光输出功率 射线法 半导体激光器 |
| 收稿时间： | 1998/1/9 |
Studies on Three-electrode Semiconductor Lasers |
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| SUNHongxia LUHongchang.Studies on Three-electrode Semiconductor Lasers[J].Semiconductor Photonics and Technology,1998,4(2):74-77,98. |
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| Abstract: | Using the ray trace method, three-section semiconductor lasers are studied. An analytic expression of output power for the three-section semiconductor lasers is derived for the first time. From this expression, threshold condition is also obtained. |
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| Keywords: | Optical Output Power Ray Method Semiconductor Laser |
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