Monolithically integrated enhancement/depletion-mode AIGaN/GaN HEMT D flip-flop using fluorine plasma treatment |
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Authors: | Xie Yuanbin Quan Si Ma Xiaohua Zhang Jincheng Li Qingmin Hao Yue |
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Affiliation: | Key Laboratory of Wide Bandgap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University,Xi'an 710071,China |
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Abstract: | Depletion-mode and enhancement-mode AlGaN/GaN HEMTs using fluorine plasma treatment were integrated on one wafer. Direct-coupled FET logic circuits, such as an E/D HEMT inverter, NAND gate and D flip-flop, were fabricated on an AlGaN/GaN heterostructure. The D flip-flop and NAND gate are demonstrated in a GaN system for the first time. The dual-gate AlGaN/GaN E-HEMT substitutes two single-gate E-HEMTs for simplifying the NAND gate and shrinking the area, integrating with a conventional AlGaN/GaN D-HEMT and demonstrating a NAND gate. E/D-mode D flip-flop was fabricated by integrating the inverters and the NAND gate on the AlGaN/GaN heterostructure. At a supply voltage of 2 V, the E/D inverter shows an output logic swing of 1.7 V, a logic-low noise margin of 0.49 V and a logic-high noise margin of 0.83 V. The NAND gate and D flip-flop showed correct logic function demonstrating promising potential for GaN-based digital ICs. |
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Keywords: | AIGaN/GaN fluorine plasma treatment inverter NAND gate D flip-flop |
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