GaAs-based long-wavelength InAs bilayer quantum dots grown by molecular beam epitaxy |
| |
Authors: | Zhu Yan Li Mifeng He Jifang Yu Ying Ni Haiqiao Xu Yingqiang Wang Juan He Zhenhong Niu Zhichuan |
| |
Affiliation: | State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083, China |
| |
Abstract: | Molecular beam epitaxy growth ofa bilayer stacked InAs/GaAs quantum dot structure on a pure GaAs matrix has been systemically investigated.The influence of growth temperature and the InAs deposition of both layers on the optical properties and morphologies of the bilayer quantum dot (BQD) structures is discussed.By optimizing the growth parameters,InAs BQD emission at 1.436μm at room temperature with a narrower FWHM of 27 meV was demonstrated.The density of QDs in the second layer is around 9 × 109 to 1.4 × 1010 cm-2.The BQD structure provides a useful way to extend the emission wavelength of GaAs-based material for quantum functional devices. |
| |
Keywords: | InAs bilayer quantum dots molecular beam epitaxy long wavelength photoluminescence |
本文献已被 CNKI 万方数据 等数据库收录! |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |