High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system |
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Authors: | Yin Haibo Wang Xiaoliang Ran Junxue Hu Guoxin Zhang Lu Xiao Hongling Li Jing Li Jinmin |
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Affiliation: | Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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Abstract: | A homemade 7 × 2 inch MOCVD system is presented.With this system,high quality GaN epitaxial layers,InGaN/GaN multi-quantum wells and blue LED structural epitaxial layers have been successfully grown.The non-uniformity of undoped GaN epitaxial layers is as low as 2.86%.Using the LED structural epitaxial layers,blue LED chips with area of 350 × 350μm2 were fabricated.Under 20 mA injection current,the optical output power of the blue LED is 8.62 mW. |
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Keywords: | MOCVD GaN InGaN/GaN MQWs LED |
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