A Ka-band 22 dBm GaN amplifier MMIC

A Ka-band GaN amplifier MMIC has been designed in CPW technology,and fabricated with a domestic GaN epitaxial wafer and process.This is,to the best of our knowledge,the first demonstration of domestic Kaband GaN amplifier MMICs.The single stage CPW MMIC utilizes an AIGaN/GaN HEMT with a gate-length of 0.25 μm and a gate-width of 2 × 75 μm.Under Vds =10 V,continuous-wave operating conditions,the amplifier has a 1.5 GHz operating bandwidth.It exhibits a linear gain of 6.3 dB,a maximum output power of 22 dBm and a peak PAE of 9.5％ at 26.5 GHz.The output power density of the AIGaN/GaN HEMT in the MMIC reaches 1 W/mm at Ka-band under the condition of Vds =10 V.