Dark conductivity and photoconductivity of amorphous Hg0.78Cd0.22Te thin films |
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Authors: | Qiu Feng Xiang Jinzhong Kong Jincheng Yu Lianjie Kong Lingde Wang Guanghua Li Xiongjun Yang Lili Li Cong Ji Rongbin |
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Affiliation: | 1. School of Physical Science and Technology, Yunnan University, Kunming 650091, China;Kunming Institute of Physics, Kunming 650223, China 2. School of Physical Science and Technology, Yunnan University, Kunming 650091, China 3. Kunming Institute of Physics, Kunming 650223, China |
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Abstract: | This paper reports the dark conductivity and photoconductivity of amorphous Hg0.78Cd0.22 Te thin films deposited on an Al2O3 substrate by RF magnetron sputtering.It is determined that dark conduction activation energy is 0.417 eV for the as-grown sample.Thermal quenching is absent for the as-grown sample during the testing temperature zone,but the reverse is true for the polycrystalline sample.Photosensitivity shows the maximum at 240 K for amorphous thin films,while it is higher for the as-grown sample than for polycrystalline thin films in the range from 170 to 300 K.The recombination mechanism is the monomolecular recombination process at room temperature,which is different from the low temperature range.Theμτ-product is low in the range of 10-11-10-9 cm2/V,which indicates that some defect states exist in the amorphous thin films. |
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Keywords: | amorphous MCT dark conductivity photoconductivity |
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