固态微波毫米波、太赫兹器件与电路的新进展

固态微波毫米波、太赫兹器件与电路是微电子、纳电子领域的战略制高点之一,SiCMOS技术进入纳米加工时代,GaAs,InP材料的"能带工程"(超晶格、异质结),GaN材料的宽禁带和界面特性以及石墨烯纳米级新材料的创新发展都深刻影响着固态微波毫米波、太赫兹器件与电路的进展。描述了固态微波、毫米波和太赫兹器件与电路当前发展的新亮点,包括纳米加工技术、石墨烯新材料、GaN MMIC功率合成突破3 mm频段百瓦级、三端器件进入太赫兹和两端器件倍频链突破2.7 THz微瓦功率。并重点就当前发展的RF CMOS,SiGe HBT,LDMOS,GaAsPHEMT,GaAs MHEMT,InP HEMT,InP HBT,GaN HEMT,GFET和THz倍频链等10个领域的发展特点、2011年最新发展以及未来发展趋势进行介绍。

New Developments of Solid State Microwave, Millimeter-wave,THz Devices and Circuits

Solid microwave millimeter-wave,THz devices and circuit is one of the strategy commanding heights in the microelectronics,nano electronic field.The progress of the solid microwave millimeter-wave,THz devices and circuit are profound influenced by it that Si CMOS technology is into the nano processing times,GaAs,InP materials are into the "energy band engineering"(the superlattice,heterogeneous),the wide band gaps and interface characteristics of GaN materials and the innovative development of the new graphene nanoscale materials.The new developments of solid state microwave,millimeter-wave,THz devices and circuits are described,including nanometer technology,new material of graphene,GaN MMIC power synthesis breakthrough hundred watts at 3 mm band,three terminal device into THz and tow terminal device breakthrough microwatt power at 2.7 THz.With emphasis put on the performance,the new progress in 2011 and future trends of RF CMOS,SiGe HBT,LDMOS,GaAs PHEMT,GaAs MHEMT,InP HEMT,InP HBT,GaN HEMT,GFET and THz frequency multiplier chain are reviewed.