GaAs pHEMT工艺6～18GHz有源倍频器MMIC

基于GaAs pHEMT工艺,设计了一个6～18 GHz宽带有源倍频器MM IC,最终实现了较高的转换增益和谐波抑制特性。芯片内部集成了输入匹配、有源巴伦、对管倍频器和输出功率放大器等电路。外加3.5 V电源电压下的静态电流为80 mA;输入功率为6 dBm时,6～18 GHz输出带宽内的转换增益为6 dB;基波和三次谐波抑制30 dBc。当输出频率为12 GHz时,100 kHz频偏下的单边带相位噪声为-143 dBc/Hz。芯片面积为1 mm×1.5 mm。

6 -18 GHz Active Frequency Doubler MMIC Based on GaAs pHEMT Process

A GaAs pHEMT active wide-band frequency doubler MMIC is presented.This prototype MMIC is capable to provide efficient conversion gain and high harmonic rejection from 6 to 18 GHz at the output.The doubler is included a input matching circuit,active balun,a pair of transistor frequency doubler and distributed power amplifier stage.The chip is operated from a single 3.5 V supply voltage and consumed only 80 mA of current typically.The conversion gain of 6 dB was gotten over the output frequency range at 6 dBm input power in the circuit.The chip also achieves excellent fundamental and third harmonic frequency rejection about 30 dBc.When the output frequency was 12 GHz,the SSB phase noise can be achieved-143 dBc/Hz at 100 kHz offset frequency.The total size of this compact chip is 1 mm×1.5 mm.