| p沟VDMOS的设计及抗辐照特性研究 |
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| 引用本文： | 郑君,周伟松,胡冬青,刘道广,何仕均,许军. p沟VDMOS的设计及抗辐照特性研究[J]. 半导体技术, 2011, 36(12): 905-909,928. DOI: 10.3969/j.issn.1003-353x.2011.12.002 |
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| 作者姓名： | 郑君 周伟松 胡冬青 刘道广 何仕均 许军 |
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| 作者单位： | 清华大学核能与新能源技术研究院,北京,100084;北京工业大学 电子信息与控制工程学院,北京,100124;清华大学微电子学研究所,北京,100084 |
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| 基金项目： | 国家自然科学基金资助项目(60820106001) |
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| 摘 要： | 借助半导体仿真工具Silvaco中所提供的工艺摸拟器(Athena)和器件摸拟器(Atlas),及L-Edit版图设计工具,设计了一款击穿电压高于-90 V、阈值电压为-4 V的p沟VDMOS器件。经实际流片测试,器件的导通电阻小于200 m!,跨导为5 S,栅-源泄漏电流和零栅电压时的漏-源泄漏电流均在纳安量级水平,二极管正向压降约为-1 V。采用2-D器件仿真方法以及相关物理模型对所设计的p沟VDMOS器件的单粒子烧毁(SEB)和单粒子栅击穿(SEGR)效应进行了分析和研究,并通过对所获得的器件样片采用钴-60"射线源进行辐照实验,研究了在一定剂量率、不同总剂量水平条件下辐照对所研制的p沟VDMOS器件相关电学参数的影响情况。
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| 关 键 词： | p沟VDMOS:单粒子烧毁 单粒子栅击穿 辐照 线性能量转移 |
Design and Anti-Radiation Research of P-Channel VDMOS |
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| Zheng Jun,Zhou Weisong,Hu Dongqing,Liu Daoguang,He Shijun,Xu Jun. Design and Anti-Radiation Research of P-Channel VDMOS[J]. Semiconductor Technology, 2011, 36(12): 905-909,928. DOI: 10.3969/j.issn.1003-353x.2011.12.002 |
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| Authors: | Zheng Jun Zhou Weisong Hu Dongqing Liu Daoguang He Shijun Xu Jun |
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| Affiliation: | 1b(1.a.Institute of Nuclear and New Energy Technology; b.Institute of Microelectronics,Tsinghua University,Beijing 100084,China; 2.College of Electronic Information and Control Engineering,Beijing University of Technology,Beijing 100124,China; |
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| Abstract: | With process simulator(Athena)and device simulator(Atlas)in Silvaco and L-Edit layout editor,one type of p-channel VDMOS was designed,whose BVDSS is higher than-90 V,and VGS(th) is-4 V.The test results show that RDS(on) is less than 200 mΩ、gfs is 5 S,IGSS and IDSS are all in level of nA and VSD is about-1 V.Utilizing 2-D device simulation method and related simulation models,the single-event burnout(SEB)and single-event gate rupture(SEGR)effects of the designed p-channel VDMOS were analyzed.Through irradiating the device samples using Co-60 γray source,the irradiation effects on some electrical parameters of the designed p-channel VDMOS with certain dose rate and different dose levels were studied. |
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| Keywords: | p-channel VDMOS single-event burnout(SEB) single-event gate rupture(SEGR) irradiation linear energy transfer(LET) |
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