High-transconductance InAs/AlSb heterojunction field-effecttransistors with δ-doped AlSb upper barriers |
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| Authors: | Werking JD Bolognesi CR Chang L-D Nguyen C Hu EL Kroemer H |
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| Affiliation: | Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA; |
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| Abstract: | The authors report the fabrication and temperature-dependent characterization of InAs/AlSb quantum-well heterojunction field-effect transistors (HFETs). Devices with electron sheet concentrations of 3.8×1012 cm-2 and low-field electron mobilities of 21000 cm2/V-s have been realized through the use of Te δ-doping sheets in the upper AlSb barrier. One device with a 2.0-μm gate length showed a peak extrinsic transconductance of 473 mS/mm at room temperature. Gate leakage current, operating current density, and extrinsic transconductance were found to decrease with decreasing temperature |
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