Photoluminescence analysis of InGaP top cells for high-efficiency multi-junction solar cells |
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| Authors: | Ming-Ju Yang Masafuini Yamaguchi Tatsuya Takamoto Eiji Ikeda Hiroshi Kurita Masamichi Ohmori |
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| Affiliation: | aToyota Technical Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468, Japan;bJapan Energy Co. Cen. Research Laboratories, Niizo Toda, Saitama 335, Japan |
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| Abstract: | A way of evaluate the minority-carrier lifetime by using photoluminescence (PL) measurement is proposed which includes self-absorption. The room-temperature PL intensity is analyzed theoretically for bulk crystals and a device with n+-p junction configuration, based on a one-dimensional model. Photoluminescence analysis of In0.5Ga0.5P solar cells grown on GaAs and Si substrates by MOCVD (metal organic vapor deposition) have been carried out and compared with the properties of the In0.5Ga0.5P solar cells. By improving minority-carrier lifetime, high-efficiency In0.5Ga0.5P cells on GaAs substrates with an efficiency of 18.5% have been made. |
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| Keywords: | Photoluminescence InGaP top cells Multi-junction solar cells |
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