Room temperature sensing properties of networked GaN nanowire sensors to hydrogen enhanced by the Ga2Pd5 nanodot functionalization |
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Authors: | Sang Sub KimJae Young Park Sun-Woo ChoiHyo Sung Kim Han Gil NaJu Chan Yang Chongmu LeeHyoun Woo Kim |
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Affiliation: | School of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea |
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Abstract: | Multiple-networked GaN nanowires with excellent sensing properties to hydrogen were realized by functionalizing their surfaces with Ga2Pd5-related nanodots. Compared to the bare-GaN nanowire sensors, functionalization improved the relative resistance responses by a factor of >50 at H2 concentrations ranging from 100 to 2000 ppm. At room temperature, the nanodot-functionalized GaN nanowire sensors exhibited a relative resistance response of 34.1% at 100 ppm H2. Interestingly, a shell layer was transformed mostly into Ga2Pd5-phased nanodots, which was confirmed by X-ray diffraction and transmission electron microscopy. The mechanisms responsible for the improvement induced by nanodot functionalization are proposed in terms of the hydrogen spillover effect. |
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Keywords: | Nanowires GaN Ga2Pd5 Annealing Hydrogen sensors |
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