Microwave performance of pseudomorphic resonant-tunnelling hot electron transistors at 77 K |
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| Authors: | Imaurua K. Mori T. Ohnishi H. Muto S. Yokayama N. |
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| Affiliation: | Fujitsu Ltd., Atsugi, Japan; |
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| Abstract: | Describes the first 77 K microwave measurements for resonant-tunnelling hot electron transistors (RHETs) fabricated using GaInAs/AlInAs pseudomorphic heterostructures. A collector current peak-to-valley ratio of 10 is obtained with a peak collector current density of 2*10/sup 5/ A/cm/sup 2/. A current gain cut-off frequency f/sub T/ of 63 GHz and a maximum oscillation frequency f/sub max/ of 44 GHz are measured at 77 K with an emitter current density of 1.1*10/sup 5/ A/cm/sup 2/.<> |
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