Interactions between Al-1 wt% Si thin film and W-Ti barrier layer |
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Authors: | Peng -Heng Chang Huei -Ming Chen Hung -Yu Liu J G Bohlman |
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Affiliation: | (1) Institute of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan;(2) Materials Science Laboratory, Texas Instruments Inc., M/S 147, PO Box 655936, 75265 Dallas, Texs, USA |
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Abstract: | The interaction of Al-1 wt% Si with a W-Ti barrier layer in the Al/Ti3W7/SiO2/Si system was studied over the temperature range of 400–500 °C for reaction times up to 300 h. The interaction was found to be diffusion-controlled, and to occur in a layer-by-layer fashion. The first reaction product is always Al12W, which forms at the Al/Ti3W7 interface. With excess W in the system, Al will eventually be completely converted to Al12W, and further interactions result in the formation of an Al4W layer at the Al12W/Ti3W7 interface. The amount of Al4W increases at the expense of Al12W. Ti plays a minor role in the interaction and forms a small amount of Al3Ti precipitates in the Al12W matrix. Decomposition of the Ti3W7 pseudoalloy into W and Ti phases is not significant, and is not detected by X-ray diffraction even after annealing at 500 °C for 300 h. The kinetics of the Al12W formation follows a parabolic reaction law with an activation energy of 2.53 eV. The sheet resistance of the film is insensitive to compound formation as long as a continuous Al film exists in the system. The sheet resistance increases dramatically when Al is consumed to the extent that it is no longer a continuous film. The sheet resistance of the Al12W layer is estimated to be 570 m –1. |
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