Preparation of BN films by r.f. thermal plasma chemical vapour deposition |
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| Authors: | S Matsumoto N Nishida K Akashi K Sugai |
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| Affiliation: | (1) National Institute for Research in Inorganic Materials, 1-1 Namiki, 305 Tsukuba-shi, Japan;(2) Department of Industrial and Engineering Chemistry, Faculty of Science Technology, Science University of Tokyo, 2641 Yamasaki, 278 Noda-shi, Japan;(3) Nachi-Fujikoshi Corp., 20 Ishigame, 930 Toyama-shi, Japan;(4) Present address: Iron and Steel Research Laboratory, Sumitomo Metal Industries Ltd, 1-8 Fusocho, 660 Amagasaki-shi, Japan |
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| Abstract: | Boron nitride films were prepared at 1 atm by r.f. thermal plasma chemical vapour deposition from the gas systems of Ar-BF3-N2 (or NH3, NF3)-H2, Ar-BCl3-N2 (or NH3, NF3)-H2, and Ar-B2H6-N2 (or NH3)-H2. The appearance and the deposition rate of the films changed drastically with the composition of the feed gas. Only from the Ar-BF3-N2(-NF3) gas, were transparent and smooth films obtained, while from other gas systems, white flaky or powder-like deposits formed. The structure of these films was basically sp2-bonded turbostratic BN, and the formation of cubic BN was not confirmed. |
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