| PECVD生长氮化硅介质膜的工艺研究 |
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| 引用本文： | 张顾万,龙飞. PECVD生长氮化硅介质膜的工艺研究[J]. 半导体光电, 2001, 22(3): 201-203,217 |
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| 作者姓名： | 张顾万 龙飞 |
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| 作者单位： | 重庆光电技术研究所, |
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| 摘 要： | 对PECVD生长氮化硅介质膜的工艺条件进行了实验研究，获得了生长氮化硅介质膜的最佳工艺条件，制出了高质量的氮化硅介质膜，对样品进行了湿法腐蚀和超声实验，在显微镜下观察无膜脱落现象发生。阐述了几种工艺参数对介质膜生长的影响。
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| 关 键 词： | PECVD 氮化硅 薄膜 介质膜 |
| 文章编号： | 1001-5868(2001)03-0201-03 |
Research on Technology for Si3N4 Thin Film Grown by PECVDc |
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| ZHANG Gu-wan,LONG Fei. Research on Technology for Si3N4 Thin Film Grown by PECVDc[J]. Semiconductor Optoelectronics, 2001, 22(3): 201-203,217 |
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| Authors: | ZHANG Gu-wan LONG Fei |
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| Abstract: | Research on growth technology for Si 3N 4 thin film by PECVD is carried out experimentally.Optimum process condition is obtained,and high quality Si 3N 4 thin film is successfully developed. Through wet etching and ultrasonic experiment ,no film falling is observed with microscope.Effect of some process parameters on the growth of the film is described. |
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| Keywords: | PECVD Si 3N 4 thin film |
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