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用于圆片级封装的金凸点研制
引用本文:王水弟,蔡坚,谭智敏,胡涛,郭江华,贾松良. 用于圆片级封装的金凸点研制[J]. 半导体技术, 2004, 29(4): 27-30
作者姓名:王水弟  蔡坚  谭智敏  胡涛  郭江华  贾松良
作者单位:清华大学微电子学研究所,北京,100084;清华大学微电子学研究所,北京,100084;清华大学微电子学研究所,北京,100084;清华大学微电子学研究所,北京,100084;清华大学微电子学研究所,北京,100084;清华大学微电子学研究所,北京,100084
摘    要:介绍了电镀法进行圆片级封装中金凸点制作的工艺流程,并对影响凸点成型的主要工艺因素进行了研究.凸点下金属化层(UBM,under bump metallization)溅射、厚胶光刻和厚金电镀是其中的工艺难点,通过大量的实验研究,确定了TiW/Au的UBM体系,得到了优化的厚胶光刻工艺.同时,研制了用于圆片级封装金凸点制作的垂直喷镀设备,选用不同的电镀液体系和光刻胶体系,对电镀参数进行了控制和研究.对制作的金凸点与国外同类产品的基本特性进行了对比,表明其已经达到可应用水平.

关 键 词:金凸点  凸点下金属化层  厚胶光刻  电镀  喷镀
文章编号:1003-353X(2004)04-0027-04
修稿时间:2003-06-03

Research of gold bump for wafer level package
WANG Shui-di,CAI Jian,TAN Zhi-min,HU Tao,GUO Jiang-hua,JIA Song-liang. Research of gold bump for wafer level package[J]. Semiconductor Technology, 2004, 29(4): 27-30
Authors:WANG Shui-di  CAI Jian  TAN Zhi-min  HU Tao  GUO Jiang-hua  JIA Song-liang
Abstract:A method of Au bump fabrication has been studied for wafer level packaging. Theprocess flow of the bumping using electroplating is described. UBM sputtering, thick photoresistlithography and thick Au electroplating are investigated. UBM system of TiW/Au is selected andoptimal process of thick photoresist lithography is got after experiments. A fountain-plating ma-chine has been developed for wafer level Au bumping. Studies on the parameter of electroplating arealso performed with different plating solutions and photoresist systems. A comparison between Aubumps fabricated and those of other vendors is made, which indicates the fabricated bumps could beused for application.
Keywords:gold bump  under bump metallization  thick photoresist lithography  electroplating  fountain plating
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