Heteroepitaxy of Ir films on silicon with a ceria/yttria stabilized zirconia buffer layer |
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Authors: | V.G. BeshenkovL.A. Fomin D.V. IrzhakV.A. Marchenko V.I. NikolaichikA.G. Znamenskii |
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Affiliation: | Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, 142432 Chernogolovka, Moscow Region, Russia |
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Abstract: | Heteroepitaxial Ir films on Si(001) with a double ceria/yttria stabilized zirconia heteroepitaxial buffer layer were grown by magnetron sputtering. As-deposited CeO2 films covered with {111} faceted pyramids resulted in iridium films with the [001] axis normal to the substrate plane. The buffered substrates annealed at 1115 °C have a smooth surface; Ir films on such substrates have the (111) orientation and consist of grains turned at 90° toward each other. |
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Keywords: | Iridium Epitaxial films Surface morphology Magnetron sputtering Cerium dioxide Buffer layer |
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