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Growth of GaAs by vacuum atomic layer epitaxy using tertiarybutylarsine |
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| Authors: | Ming Y. Jow Bang Y. Maa Takashi Morishita P. Daniel Dapkus |
| Affiliation: | (1) Department of Materials Science and Electrical Engineering, University of Southern California, 90089 Los Angeles, CA;(2) Central Laboratory, ASAHI Chemical Industry Co. Ltd., 2-1 Samajima, Fuji City, 416 Sizuoka, Japan |
| Abstract: | We report the results of GaAs grown by vacuum atomic layer epitaxy using trimethylgallium (TMGa) and tertiarybutylarsine (TBAs) as the group III and V sources. The growth rate saturates at one monolayer per cycle for a wide range of growth parameters. The temperature window for monolayer growth is as wide as 70°C. All the films are p-type with the carrier concentration depending on the exposure conditions of TMGa and TBAs. |
| Keywords: | Atomic layer epitaxy GaAs tertiarybutylarsine |
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