Key characterization factors of accurate power modeling for Fin FET circuits

Due to its excellent device features, manufacture process compatibility and diversity of the circuit structures, The Fin FET is considered appropriate candidate for the conventional bulk-MOSFET in sub-22 nm technology nodes. However, the power estimation CAD tools for Fin FET are missing at the moment, which mainly results from the absence of Fin FET power analysis and Fin FET power model. Three key factors for Fin FET power model are: the dimension of the look-up-tables, that to find out the most significant factors that influence Fin FET power and to make them as indexes for the look-up-tables; the distance between sampling points; and the interpolation method. In this paper, various factors that may contribute to the Fin FET power consumption are evaluated. Of all the factors, the continuous ones are compared with sensitivity method. As to other discrete factors, methods of building them in power model are given according to the features of the each factor and the way it influences the power. Based on the simulation result, standard cell power library model for Fin FET is proposed. The research work lays foundation for accurate power analysis and modeling for high-level power analysis of Fin FET circuits. Besides, these key factors are also crucial for low-power Fin FET circuit design.