Singlemode output power enhancement of InGaAs VCSELs by reducedspatial hole burning via surface etching |
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| Authors: | Unold J. Golling M. Mederer F. Michalzik R. Supper D. Ebeling K.J. |
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| Affiliation: | Dept. of Optoelectron., Ulm Univ.; |
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| Abstract: | Completely singlemode MBE-grown selectively oxidised InGaAs-VCSELs with aperture diameters of up to 14 μm have been fabricated using a self-aligned shallow surface etch. By choosing the growth position accordingly, a continuous variation of the aperture diameter across the wafer is achieved to optimise the surface etch to aperture diameter ratio. A record singlemode output power of 5.7 mW (30 dB SMSR) is obtained for a 5.8 μm-aperture diameter, 2.8 μm etch spot diameter device |
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