Properties of Va metal-B films prepared by r.f.-sputtering |
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| Authors: | Kiichi Oda Hirohide Yata Tetsuo Yoshio Kazuo O-Oka Kohei Oda |
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| Affiliation: | (1) Research Institute for Non-Crystalline Materials, School of Engineering, Okayama University, 700 Okayama, Japan;(2) Yonago Technical College, 683 Yonago, Japan;(3) Present address: Central Research Laboratory of Ube Industries, Ltd, Kogushi 1978-5, 755 Ube, Japan |
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| Abstract: | Ta100-xBx alloy films were prepared by r.f.-sputtering in the chemical composition range 45  x 77. Ta100-xBx (45 x 58) films consist of the amorphous phase, while the TaB2 crystal phase was observed in Ta100-xBx (66 x 77) films. A remarkable preferred orientation with the (001) plane of TaB2 parallel to the film surface was observed in Ta34B66. The d.c. electrical conductivity of Ta100-xBx (45 x 77) films decreases with increasing boron content in the range 6.7 × 103 to 1.3 × 103 –1 cm–1. The micro-Vickers hardness of Ta100-xBx (45 x 77) films was in the range 2200 to 2600 kg mm–2. |
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