| 圆柱突变结击穿电压及电场沿结边的分布 |
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| 引用本文： | 何进.圆柱突变结击穿电压及电场沿结边的分布[J].微纳电子技术,2001,38(1):54-57. |
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| 作者姓名： | 何进 |
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| 作者单位： | 北京大学微电子学研究所,北京,100871 |
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| 摘 要： | 基于横向侧扩散与纵向体扩散结深构成椭圆形冶金结外形这一与工艺实际相符合的假设 ,通过圆柱对称解的归一化 ,提出了平面结击穿电场沿结边分布的解析解。理论结果阐述了不同结深及结边形状对边缘区击穿电压的影响规律 ,说明了表面击穿电压总是小于体内击穿电压的原因。
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| 关 键 词： | 平面结 击穿电压 结深 场分布 |
| 文章编号： | 1001-5507(2001)01-0054-04 |
| 修稿时间： | 2000年4月14日 |
Analytical solutions for breakdown voltage and electric field distribution along junction edge for planar abrupt junction |
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| HE Jin.Analytical solutions for breakdown voltage and electric field distribution along junction edge for planar abrupt junction[J].Micronanoelectronic Technology,2001,38(1):54-57. |
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| Authors: | HE Jin |
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| Abstract: | Based on the elliptic shape assumption of p n junction metallurgical boundary which is a exactly approximation to the practical diffused junction edge,the analytical solutions for the breakdown voltage and electric field distribution along the junction edge have been obtained.Effects of the ratio of the lateral junction depth to the bulk junction depth,normalized junction depth and the location angle along the junction edge on the breakdown voltage and maximum electric field have been discussed.Theory results explain why the surface electric field is always larger than the bulk and the breakdown frequently occurs at the surface. |
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| Keywords: | planar junction breakdown voltage junction depth field distribution |
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