MOVPE-grown GaInNAs VCSELs at 1.3 /spl mu/m with conventional mirror design approach |
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| Authors: | Vukusic J Modh P Larsson A Hammar M Mogg S Christiansson U Oscarsson V Odling E Malmquist J Ghisoni M Gong P Griffiths E Joel A |
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| Affiliation: | Dept. of Microelectron., Chalmers Univ. of Technol., Goteborg, Sweden; |
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| Abstract: | 1.3 /spl mu/m oxide confined GaInNAs VCSELs designed using the same design philosophy used for standard 850 nm VCSELs is presented. The VCSELs have doped mirrors, with graded and highly doped interfaces, and are fabricated using production-friendly procedures. Multimode VCSELs (11 /spl mu/m oxide aperture) with an emission wavelength of 1287 nm have a threshold current of 3 mA and produce 1 mW of output power at 20/spl deg/C. The maximum operating temperature is 95/spl deg/C. Emission at 1303 nm with 1 mW of output power and a threshold current of 7 mA has been observed from VCSELs with a larger detuning between the gain peak and the cavity resonance. |
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