| 基于不同测量手段的纳米晶器件的存储特性 |
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| 引用本文： | 李蔚,张志刚,梁仁荣,何洋,王柳笛,朱钧.基于不同测量手段的纳米晶器件的存储特性[J].半导体学报,2007,28(8):1169-1172. |
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| 作者姓名： | 李蔚 张志刚 梁仁荣 何洋 王柳笛 朱钧 |
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| 作者单位： | 清华大学微电子与纳电子学系,北京,100084;清华大学微电子与纳电子学系,北京,100084;清华大学微电子与纳电子学系,北京,100084;清华大学微电子与纳电子学系,北京,100084;清华大学微电子与纳电子学系,北京,100084;清华大学微电子与纳电子学系,北京,100084 |
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| 基金项目： | 国家重点基础研究发展计划(973计划) |
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| 摘 要： | 对纳米晶器件,尤其是MOS电容进行了横截面TEM分析和不同条件下的电学特性(C-V特性)测量,包括 /-BT分析. 揭示了系统的纳米晶存储物理机制,例如电荷俘获、界面态填充和温度特性. 研究结果表明,高温、大电压摆幅和偏置情况下,器件编程窗口的恶化和阈值电压的漂移与多数载流子的种类有关.
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| 关 键 词： | 纳米晶 存储 测量 |
| 文章编号： | 0253-4177（2007）08-1169-04 |
| 收稿时间： | 1/26/2007 6:06:42 PM |
| 修稿时间： | 2007-01-26 |
Storage Characteristics of Nano-Crystal Si Devices Using Different Measurements for MOS Capacitors |
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| Li Wei,Zhang Zhigang,Liang Renrong,He Yang,Wang Liudi and Zhu Jun.Storage Characteristics of Nano-Crystal Si Devices Using Different Measurements for MOS Capacitors[J].Chinese Journal of Semiconductors,2007,28(8):1169-1172. |
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| Authors: | Li Wei Zhang Zhigang Liang Renrong He Yang Wang Liudi and Zhu Jun |
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| Affiliation: | Department of Microelectronics and Nanoelectronics,Tsinghua University,Beijing 100084,China;Department of Microelectronics and Nanoelectronics,Tsinghua University,Beijing 100084,China;Department of Microelectronics and Nanoelectronics,Tsinghua University,Beijing 100084,China;Department of Microelectronics and Nanoelectronics,Tsinghua University,Beijing 100084,China;Department of Microelectronics and Nanoelectronics,Tsinghua University,Beijing 100084,China;Department of Microelectronics and Nanoelectronics,Tsinghua University,Beijing 100084,China |
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| Abstract: | The storage characteristics of nano-crystal Si (NC-Si) devices,especially for MOS capacitors,are studied by cross sectional transmission electron microscopy (TEM) and capacitance-voltage (C-V) measurement under different conditions,including programming and erasing at different temperatures and gate voltages,as well as using +/-bias-temperature (BT) measurements.Physical mechanisms such as carrier trapping,interface state filling,and temperature related deterioration are revealed.The experimental results demonstrate that the degradation of the program window and threshold voltage (VT) shift at high temperature,large voltage sweep range,and bias applied to sweep voltage is strongly related to the type of majority carriers. |
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| Keywords: | nano-crystal storage measurement |
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