Scanning electron microscopy of long-wavelength laser structures |
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Authors: | V. A. Solov’ev M. P. Mikhailova K. D. Moiseev M. V. Stepanov V. V. Sherstnev Yu. P. Yakovlev |
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Affiliation: | (1) A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia |
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Abstract: | New possibilities of scanning electron microscopy, using secondary-and reflected-electron signals, for determining the position of heteroboundaries in long-wavelength laser structures are reported. The formation of the indicated signals in structures of mid-infrared-range lasers of a new type based on type-II GaInAsSb/InGaAsSb heterostructures as well as in the conventional InAsSb/InAsSbP heterostructures is analyzed. The observed characteristic features of the formation of secondary-and reflected-electron signals in these structures as compared with the well-studied AlGaAs/GaAs structures are explained. The results obtained are necessary for accurate determination of an important laser parameter — the position of the p-n junction. It is shown that it is best to use the reflected-electron signal. Fiz. Tekh. Poluprovodn. 32, 1300–1305 (November 1998) |
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