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磁控溅射WS2薄膜的制备工艺及其性能
引用本文:宋玉波,代明江,余志明,韦春贝,侯惠君,肖晓玲.磁控溅射WS2薄膜的制备工艺及其性能[J].真空,2011,48(2).
作者姓名:宋玉波  代明江  余志明  韦春贝  侯惠君  肖晓玲
作者单位:1. 中南大学,材料科学与工程学院,湖南,长沙,410083;广州有色金属研究院,材料表面工程研究所,广东,广州,510651
2. 广州有色金属研究院,材料表面工程研究所,广东,广州,510651
3. 中南大学,材料科学与工程学院,湖南,长沙,410083
基金项目:广东省自然科学基金项目(07006996A)
摘    要:采用孪生中频磁控溅射的方法在低温条件下制备了WS2薄膜,利用X-射线衍射仪(XRD)、扫描电子显微镜(SEM)、能谱仪(EDX)、显微硬度仪、划痕仪和球盘式摩擦磨损试验机对薄膜的物相结构、微观形貌以及摩擦学性能进行了研究。结果表明:所制备的WS2薄膜呈现出明显的(002)晶面择优生长,S/W原子比1.52,在大气环境中摩擦系数可低于0.01,载荷与转速对薄膜的摩擦系数影响显著,在一定范围内加大载荷和提高转速都会增大其摩擦系数。

关 键 词:WS2薄膜  中频磁控溅射  低温  摩擦系数  

Tungsten disulfide films deposited by magnetron sputtering and their properties
SONG Yu-bo,DAI Ming-jiang,YU Zhi-ming,WEI Chun-bei,HOU Hui-jun,XIAO Xiao-ling.Tungsten disulfide films deposited by magnetron sputtering and their properties[J].Vacuum,2011,48(2).
Authors:SONG Yu-bo  DAI Ming-jiang  YU Zhi-ming  WEI Chun-bei  HOU Hui-jun  XIAO Xiao-ling
Affiliation:SONG Yu-bo1,2,DAI Ming-jiang2,YU Zhi-ming1,WEI Chun-bei2,HOU Hui-jun2,XIAO Xiao-ling2 (1.School of Materials Science and Engineering,Central South University,Changsha 410083,China,2.Institute of Surface Engineering,Guangzhou Research Institude of Nonferrous Metals,Guangzhou 510651,China)
Abstract:The WS2 thin films were deposited by twin-target MF magnetron sputtering process at low temperature,and their phase structure,surface micromorphology and tribological properties were investigated via SEM,EDX,XRD,microhardness gauge,scratch tester and ball-on-disc friction/wear test machine.The results showed that the films present obviously the preferential growth of(002) crystal plane and the S/W atomic ratio is 1.52.The friction coefficient of the films can be lower than 0.01 as tested in atmosphere and i...
Keywords:WS2 thin film  MF-magnetron sputtering  low temperature  friction coefficient  
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