| 金属/半导体肖特基接触模型研究进展 |
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| 引用本文： | 王光伟,郑宏兴,徐文慧,杨旭.金属/半导体肖特基接触模型研究进展[J].真空科学与技术学报,2011,31(2):149-153. |
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| 作者姓名： | 王光伟 郑宏兴 徐文慧 杨旭 |
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| 作者单位： | 天津工程师范大学电子工程学院,天津,300222 |
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| 基金项目： | 国家自然科学基金项目(No.60871026) |
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| 摘 要： | 在分析理想金属/半导体肖特基接触的基础上,概述了一般情形下肖特基接触的形成机理和影响因素。金属/半导体间的界面层使得肖特基势垒高度(SBH)对功函数的依赖减弱,也导致SBH与外加偏压有关。研究证实,多种因素,如界面晶向、原子结构、化学键和结构不完整性等,都会造成SBH的空间不均匀分布。该特性在肖特基接触中普遍存在,并对基于肖特基结的器件工作有显著影响。
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| 关 键 词： | 肖特基接触 肖特基势垒高度 理想因子 非单晶界面 势垒高度不均匀性 |
Latest Progress of Schottky Contact Modeling at Interface of Metal and Semiconductor |
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| Wang Guangwei,Zheng Hongxing,Xu Wenhui,Yang Xu.Latest Progress of Schottky Contact Modeling at Interface of Metal and Semiconductor[J].JOurnal of Vacuum Science and Technology,2011,31(2):149-153. |
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| Authors: | Wang Guangwei Zheng Hongxing Xu Wenhui Yang Xu |
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| Affiliation: | Wang Guangwei,Zheng Hongxing,Xu Wenhui,Yang Xu(School of Electronic Engineering,Tianjin University of Technology and Education,Tianjin 300222,China) |
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| Abstract: | The latest progress of the theoretical study on Schottky contact at the interface of metal and semiconductor was tentatively reviewed in a thought provoking way.The discussions centered on mechanisms of Schottky barrier formation under a general condition.The interface of metal and semiconductor results in a weak dependence of Schottky barrier height(SBH)on the work function difference between the metal and the semiconductor,and a correlation between the SBH and the bias voltage.Extensive studies show that ... |
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| Keywords: | Schottky contact Schottky barrier height Ideal factor Non-monocrystalline interface Inhomogeneity of barrier height |
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