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| 自组织InAs/GaAs与InGaAs/GaAs量子点生长及退火情况的比较 | |
| 引用本文： | 何浩,贺业全,杨再荣,罗子江,周勋,丁召.自组织InAs/GaAs与InGaAs/GaAs量子点生长及退火情况的比较[J].真空,2011,48(1). |
| 作者姓名： | 何浩 贺业全 杨再荣 罗子江 周勋 丁召 |
| 作者单位： | 1. 贵州大学理学院,贵州,贵阳,550025 2. 贵州大学理学院,贵州,贵阳,550025;贵州财经学院教育管理学院,贵州,贵阳,550004 3. 贵州大学理学院,贵州,贵阳,550025;贵州师范大学物理与电子科学学院,贵州,贵阳,550001 |
| 基金项目： | 国家自然科学基金资助项目(60886001); 贵州大学研究生创新基金(2010043); 贵州省科技厅基金(Z073085); 贵州省委组织部高层人才科研特助项目(TZJF-2008-31); 贵州省优秀科技教育人才省长专项基金; 黔省专合字(2009)114号贵州大学博士基金资助项目(X060031); 教育部新世纪优秀人才支持计划(NCET-08-0651) |
| 摘 要： | 本文采用MBE进行InAs/GaAs与InGaAs/GaAs量子点的生长,利用RHEED进行实时监测,并利用RHEED强度振荡测量生长速率。对生长的InAs/GaAs和InGaAs/GaAs两种量子点生长过程与退火情况进行对比,观察到当RHEED衍射图像由条纹状变为网格斑点时,InAs所需要的时间远小于InGaAs;高温退火下RHEED衍射图像恢复到条纹状所需要的时间InAs比InGaAs要长。 |
| 关 键 词： | MBE RHEED InAs/GaAs InGaAs/GaAs 自组装 退火 |
Comparison of quantum dot growth and annexing conditions between self-assembled InAs/GaAs and InGaAs/GaAs |
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| HE Hao,HE Ye-quan,YANG Zai-rong,LUO Zi-jiang,ZHOU Xun,DING Zhao.Comparison of quantum dot growth and annexing conditions between self-assembled InAs/GaAs and InGaAs/GaAs[J].Vacuum,2011,48(1). | |
| Authors: | HE Hao HE Ye-quan YANG Zai-rong LUO Zi-jiang ZHOU Xun DING Zhao |
| Affiliation: | HE Hao1,HE Ye-quan1,YANG Zai-rong1,LUO Zi-jiang1,2,ZHOU Xun1,3,DING Zhao1 (1.College of Science,GuiZhou University,Guiyang 550025,China,2.School of Education Administration,Guizhou College of Finance and Economics,Guiyang 550004,3.School of Physics and Electronic Science,Guizhou Normal University,Guiyang 550001,China) |
| Abstract: | Investigates the growth of InAs/GaAs and InGaAs/GaAs quantum dots via MBE,with RHEED used for real-time monitoring of film surface morphology and for growth rate measuring through intensity fluctuation.Comparing the growing process of quantum dots and annealing conditions of InAs/GaAs with that of InGaAs/GaAs,it was found that if the RHEED pattern changes to spotty from streaky the changing time required for InAs is far shorter than that for InGaAs.By contrast,if the RHEED pattern changes reversely during h... |
| Keywords: | MBE(molecular beam epitaxy) RHEED(reflection high energy electron diffraction) InAs/GaAs InGaAs/GaAs self-assembled annealing |
| 本文献已被 CNKI 万方数据 等数据库收录！ | |