首页 | 本学科首页   官方微博 | 高级检索  
     


Localized Recrystallization in Cast Al-Si-Mg Alloy during Solution Heat Treatment: Dilatometric and Calorimetric Studies
Authors:S K Chaudhury  V Warke  S Shankar and D Apelian
Affiliation:(1) Honeywell Turbo Technologies, Torrance, CA 90505, USA;(2) Bodycote Thermal Processing, Andover, MA 01810, USA;(3) Light Metal Casting Research Centre, McMaster University, Hamilton, ON L8S 4L7, USA;(4) Worcester Polytechnic Institute, Metal Processing institute, Worcester, MA 01609, USA;
Abstract:During heat treatment, the work piece experiences a range of heating rates depending upon the sizes and types of furnace. When the Al-Si-Mg cast alloy is heated to the solutionizing temperature, recrystallization takes place during the ramp-up stage. The effect of heating rate on recrystallization in the A356 (Al-Si-Mg) alloy was studied using dilatometric and calorimetric methods. Recrystallization in as-cast Al-Si alloys is a localized event and is confined to the elasto-plastic zone surrounding the eutectic Si phase; there is no evidence of recrystallization in the center of the primary Al dendritic region. The size of the elasto-plastic zone is of the same order of magnitude as the Si particles, and recrystallized grains are observed in the elasto-plastic region near the Si particles. The coefficient of thermal expansion of Al is an order of magnitude greater than Si, and thermal stresses are generated due to the thermal mismatch between the Al phase and Si particles providing the driving force for recrystallization. In contrast, recrystallization in Al wrought alloy (7075) occurs uniformly throughout the matrix, stored energy due to cold work being the driving force for recrystallization in wrought alloys. The activation energy for recrystallization in as-cast A356 alloy is 127 KJ/mole. At a slow heating rate of 4.3 K/min, creep occurs during the heating stage of solution heat treatment. However, creep does not occur in samples heated at higher heating rates, namely, 520, 130, and 17.3 K/min.
Keywords:
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号