Etched Schottky-barrier m.o.s.f.e.t.s using a single mask |
| |
| Authors: | Hogeboom J.G. Cobbold R.S.C. |
| |
| Affiliation: | University of Toronto, Department of Electrical Engineering, Toronto, Canada; |
| |
| Abstract: | A simplified method for fabricating silicon m.o.s. transistors using a single photographic mask is described. The source and drain regions are etched; underetching the oxide results in autoregistration of the gate. The characteristics of both Schottky-barrier and p?n junction source and drain devices are presented. |
| |
| Keywords: | |
|
|
