Characterization of very high purity InAs grown using trimethylindium and tertiarybutylarsine |
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Authors: | S P Watkins C A Tran G Soerensen H D Cheung R A Ares Y Lacroix M L W Thewalt |
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Affiliation: | (1) Department of Physics, Simon Fraser University, V5A1S6 Burnaby, BC |
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Abstract: | The growth of high purity InAs by metalorganic chemical vapor deposition is reported using tertiarybutylarsine and trimethylindiμm.
Specular surfaces were obtained for bulk 5-10 μm thick InAs growth on GaAs substrates over a wide range of growth conditions
by using a two-step growth method involving a low temperature nucleation layer of InAs. Structural characterization was performed
using atomic force microscopy and x-ray diffractometry. The transport data are complicated by a competition between bulk conduction
and conduction due to a surface accumulation layer with roughly 2–4 × 1012 cm−2 carriers. This is clearly demonstrated by the temperature dependent Hall data. Average Hall mobilities as high as 1.2 x 105 cm2/Vs at 50K are observed in a 10 μm sample grown at 540°C. Field-dependent Hall measurements indicate that the fitted bulk
mobility is much higher for this sample, approximately 1.8 × 105 cm2/Vs. Samples grown on InAs substrates were measured using high resolution Fourier transform photoluminescence spectroscopy
and reveal new excitonic and impurity band emissions in InAs including acceptor bound exciton “two hole transitions.” Two
distinct shallow acceptor species of unknown chemical identity have been observed. |
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Keywords: | InAs metalorganic chemical vapor deposition (MOCVD) mobility |
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