| 非晶硅中的硅氢键与光致亚稳缺陷 |
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| 引用本文： | 秦国刚,孔光临. 非晶硅中的硅氢键与光致亚稳缺陷[J]. 半导体学报, 1989, 10(9): 702-705 |
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| 作者姓名： | 秦国刚 孔光临 |
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| 作者单位： | 凝聚态和辐射物理中心中国高等科学技术中心(世界实验室)与北京大学物理系(秦国刚)，中国科学院半导体研究所(孔光临) |
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| 摘 要： | 我们曾经提出:在a-Si∶H中光致亚稳缺陷的产生是由于Si-H键断裂,本文将进一步论述这种缺陷产生的可能微观机构,着重讨论微空洞在亚稳缺陷产生中的作用,并提出:光照不仅使悬键增多,同时也使Si-Si弱键增多的机构.
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| 关 键 词： | 非晶硅 硅氢键 亚稳缺陷 |
Si-H Bond and Photo-Induced Metastable Defects in a-Si:H |
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| Qin Guogang/Center of Condensed Matter and Radiation Physics CCAST. Si-H Bond and Photo-Induced Metastable Defects in a-Si:H[J]. Chinese Journal of Semiconductors, 1989, 10(9): 702-705 |
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| Authors: | Qin Guogang/Center of Condensed Matter and Radiation Physics CCAST |
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| Affiliation: | World Laboratory |
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| Abstract: | Earlier,the authors proposed that in a-Si:H, the creation of photo-induced metastable de-fects is due to the breaking of Si-H bonds.In this paper,the authors further discuss the pos-sible microscopic mechanism of the defect creation emphasizing the role of microvoids in suchprocess, and give an interpretation for the increase of weak Si-Si bonds after light soaking. |
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| Keywords: | Amorphous silicon Si-H bond metastable defects microvoids |
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