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Chlorine auto-doping by chloride vapor phase epitaxial growth of InP |
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| Authors: | T. Iwasaki Y. Iguchi N. Yamabayashi S. Yoneyama |
| Affiliation: | (1) Optoelectronics R&D, Sumitomo Electric Industries, Ltd., 1-1-3, Shimaya 1-chome, Konohana-ku, Osaka, Japan;(2) Optoelectronic Industry and Technology Development Association, 7-5-8, Toyo, Koto-ku, Tokyo, Japan |
| Abstract: | Chlorine auto-doping phenomenon was found for the first time in InP epitaxial growth by using a PCl3/InP/H2 system. Chlorine atoms act as a donor in the epitaxial layer and the carrier concentration is dependent on the facet of InP substrate. The carrier concentration of the InP layer on ( 111)B facet was over 103 times higher than that on (111)A substrate. |
| Keywords: | Auto-doping carrier concentration chlorine donor epitaxial growth growth rate InP VPE (lll)A (lll)B |
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