| 退火温度对掺氮ZnO薄膜结构和光电特性的影响 |
| |
| 引用本文： | 钟声,徐小秋,孙利杰,林碧霞,傅竹西. 退火温度对掺氮ZnO薄膜结构和光电特性的影响[J]. 半导体学报, 2008, 29(7): 1330-1333 |
| |
| 作者姓名： | 钟声 徐小秋 孙利杰 林碧霞 傅竹西 |
| |
| 作者单位： | 中国科学技术大学物理系,合肥230026 |
| |
| 基金项目： | 国家自然科学基金资助项目(批准号:50532070)~~ |
| |
| 摘 要： | 采用Zn3N2热氧化法在直流磁控溅射设备上制备了掺氮ZnO薄膜（ZnO：N）,研究了不同退火温度对样品结构和光电特性的影响.X射线衍射谱（XRD）结果表明,Zn3N2在600℃以上退火即可转变为ZnO：N薄膜.X射线光电子能谱（XPS）发现,在热氧化法制备的ZnO：N薄膜中,存在两种与N相关的结构,分别是N原子替代O（受主）和N2分子替代O（施主）,这两种结构分别于不同的退火温度下存在,并且700℃下退火的样品在理论上具有最高的空穴浓度,这一点也由霍尔测量结果得到证实.同时,从低温PL光谱中观察到了与No受主有关的导带到受主（FA）和施主-受主对（DAP）的跃迁,并由此计算出热氧化法制备的ZnO：N薄膜中的No受主能级位置.
|
| 关 键 词： | 热氧化 ZnO XPS 受主能级 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2008-01-09 |
Influence of the Annealing Temperature on the Structural and Optical Properties of N-Doped ZnO Films |
| |
| Zhong Sheng, Xu Xiaoqiu, Sun Lijie, Lin Bixia, Fu Zhuxi. Influence of the Annealing Temperature on the Structural and Optical Properties of N-Doped ZnO Films[J]. Journal of Semiconductors, 2008, In Press. Zhong S, Xu X Q, Sun L J, Lin B X, Fu Z X. Influence of the Annealing Temperature on the Structural and Optical Properties of N-Doped ZnO Films[J]. J. Semicond., 2008, 29(7): 1330.Export: BibTex EndNote |
| |
| Authors: | Zhong Sheng Xu Xiaoqiu Sun Lijie Lin Bixia Fu Zhuxi |
| |
| Affiliation: | Department of Physics,University of Science and Technology of China,Hefei 230026,China;Department of Physics,University of Science and Technology of China,Hefei 230026,China;Department of Physics,University of Science and Technology of China,Hefei 230026,China;Department of Physics,University of Science and Technology of China,Hefei 230026,China;Department of Physics,University of Science and Technology of China,Hefei 230026,China |
| |
| Abstract: | Nitrogen-doped ZnO (ZnO:N) films are prepared by thermal oxidation of sputtered Zn3N2 layers on Al2O3 substrate.The dependence of the structural and optical properties of the ZnO:N films on annealing temperature is investigated.X-ray Diffraction (XRD) results illustrate that the as-sputtered Zn3N2 films can be transformed into ZnO:N films after annealing at 600℃ and above.X-ray photoelectron spectroscopy (XPS) reveals that nitrogen has two chemical states in the ZnO:N films:(N2)o and No,which denote substitution of molecular N for O and atomic N for O,respectively.Hall effect measurements illustrate that the hole concentration in ZnO:N films annealed at 700℃ is the highest.The FA and DAP transition peaks are observed in low temperature photoluminescence spectra,from which the nitrogen acceptor binding energy can be obtained. |
| |
| Keywords: | thermal oxidation ZnO XPS acceptor binding energy |
| 本文献已被 CNKI 维普 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
