| 硅中氢分子和空位型缺陷间的相互作用 |
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| 引用本文： | 施天生,白国仁.硅中氢分子和空位型缺陷间的相互作用[J].半导体学报,1989,10(7):561-563. |
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| 作者姓名： | 施天生 白国仁 |
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| 作者单位： | 中国科学院上海冶金研究所 上海
(施天生)，中国科学院上海冶金研究所 上海(白国仁) |
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| 摘 要： | 利用MNDO方法和模型硅晶体计算了硅中氢分子和空位型缺陷问的相互作用能.得到了晶体硅中氢分子和空位型缺陷倾向于相互结合,含氢空位型缺陷可成为硅中氢和空位聚集的核心的结论.
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| 关 键 词： | 硅 氢 缺陷 |
Interaction between Hydrogen Molecule and Vacancy-Type Defects in c-Si |
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| Shi Tiansheng/.Interaction between Hydrogen Molecule and Vacancy-Type Defects in c-Si[J].Chinese Journal of Semiconductors,1989,10(7):561-563. |
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| Authors: | Shi Tiansheng/ |
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| Affiliation: | Shi Tiansheng/Shanghai Institute of Metallurgy,Academia Sinica,ShanghaiBai Guoren/Shanghai Institute of Metallurgy,Academia Sinica,Shanghai |
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| Abstract: | The energy of interaction between hydrogen molecule and vacancy-type defects in crystal-line silicon is calculated using MNDO method and a series of model silicon crystals.It is con-cluded that the hydrogen molecule and the vacancy-type defects in silicon tend to trap eachother and that the hydrogenated vacancy-type defects serve as the nuclei of precipitation for bothhydrogen and vacancy in silicon. |
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| Keywords: | Silicon Hydrogen Defect |
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