Excellent effects of hydrogen postoxidation annealing on inversionchannel mobility of 4H-SiC MOSFET fabricated on (112¯0) face |
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| Authors: | Senzaki J. Kojima K. Harada S. Kosugi R. Suzuki S. Suzuki T. Fukuda K. |
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| Affiliation: | Ultralow-Loss Power Device Technol. Res. Body & Power Electron. Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki; |
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| Abstract: | Effects of hydrogen postoxidation annealing (H2 POA) on 4H-silicon carbide (SiC) MOSFETs with wet gate oxide on the (112¯0) face have been investigated. As a result, an inversion channel mobility of 110 cm2/Vs was successfully achieved using H2 POA at 800°C for 30 min. H2 POA reduces the interface trap density by about one order of magnitude compared with that without H2 POA, resulting in considerable improvement of the inversion channel mobility to 3.5 times higher than that without H2 POA. In addition, 4H-SiC MOSFET with H2 POA has a lower threshold voltage of 3.1 V and a wide gate voltage operation range in which the inversion channel mobility is more than 100 cm2/Vs |
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