| 间接耦合光探测器分析 |
| |
| 引用本文： | 尹长松. 间接耦合光探测器分析[J]. 半导体光电, 1998, 19(4): 274-276 |
| |
| 作者姓名： | 尹长松 |
| |
| 作者单位： | 武汉大学 |
| |
| 摘 要： | 分析了有关间接耦合光探测器的论述中对耦合系数的两种不同定义的物理意义，指出其中存在的问题。分析了间接耦合光探测器的实验数据与产品性能，提出结果上的商榷意见。
|
| 关 键 词： | 光探测器 间接耦合 耦合系数 |
Photoelectric properties of phototransistors |
| |
| SHI Zhongbin. Photoelectric properties of phototransistors[J]. Semiconductor Optoelectronics, 1998, 19(4): 274-276 |
| |
| Authors: | SHI Zhongbin |
| |
| Abstract: | A group of new equations are given in this report describing the basic DC and low frequency current-voltage characteristics of desirable phototransistors for one-dimensional model.Not only these equations can be used as a basic model of CAD for phototransistors,but they can also generally describe photoelectric properties of phototransistors.The experimental results agree quite well with the calculated value derived from these new equations.The photocurrent change in phototransistors under different voltage biased conditions is also discussed.Analysis shows that the injection photosensitive device is one of the phototransistors with the operation modes .It is found that photocurrent of the injection photosensitive devices is lower than that in the photodiodes. |
| |
| Keywords: | Phototransistor Injection Photosensitive Device Photodiode |
| 本文献已被 CNKI 维普 等数据库收录！ |
