| 用于粒子场图像速度分析的新型光源装置 |
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| 引用本文： | 任雅萍 王昭. 用于粒子场图像速度分析的新型光源装置[J]. 半导体光电, 1997, 18(4): 271-272 |
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| 作者姓名： | 任雅萍 王昭 |
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| 作者单位： | 西安交通大学 |
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| 摘 要： | 介绍了一种用于粒子图像速度分析（ＰＩＶ）的光源装置。利用该装置可在间得到一组相互平行的“光切面”，用于精确、快速地对复杂流场分布进行分析。
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| 关 键 词： | 粒子 图像速度分析 光源 粒子场 |
Measurement of deep energy level of InP:Fe by OTCS technique |
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| SHAO Limei QIAN Qingji YANG Wei. Measurement of deep energy level of InP:Fe by OTCS technique[J]. Semiconductor Optoelectronics, 1997, 18(4): 271-272 |
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| Authors: | SHAO Limei QIAN Qingji YANG Wei |
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| Abstract: | The deep energy level of semi insulation InP:Fe is measured by optical transient current spectroscopy(OTCS) technique.The effect of light intensity on OTCS measurement is discussed in detail.There exsit electron trap of E T=0.34 eV and hole trap of E T=1.13 eV in InP:Fe measured by powerful light at low temperature.The location of the OTCS peak of electron trap( E T=0.34 eV)moves to the direction of high temperature when light intensity increases.The measured value of E T is different at different light intensity.Theoretical correction of E T is carried out in terms of the effect of light intensity on the stuff ratio of the deep energy level.The experiments show that the error decreases greatly with the correction. |
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| Keywords: | Semiconductor Material Measurement Optical Transient Current Spectroscopy Impurity Level |
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