Fabrication of vertical channel top contact organic thin film transistors |
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| Affiliation: | 1. Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan;2. Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30010, Taiwan;3. Department of Photonics, National Chiao Tung University, Hsinchu 30010, Taiwan;4. Institute of Physics, National Chiao Tung University, Hsinchu 30010, Taiwan;1. Research Institute for Solar and Sustainable Energies (RISE), Republic of Korea;2. Department of Energy and Materials Engineering, Dongguk University, 30 Pildong-ro 1-gil, Junggu, Seoul, 04626, Republic of Korea;3. School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea;4. Department of Graphic Arts Information Engineering, Pukyong National University, 365 Sinseon-ro, Nam-gu, Busan, 48547, Republic of Korea |
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| Abstract: | Vertical channel top contact (TC) organic thin film transistors (OTFTs) have been successfully realized on Si substrates with SiO2 as gate insulators and P3HT(poly ～3-hexylthiophene) as organic semiconductors. The active channel region was defined by a steep step through a Si etching method. Source and drain metal contacts were deposited by vacuum evaporation through a shadow mask at a high tilting angle. Top contact transistors with channel lengths 5 μm can be fabricated with a relatively simple and efficient (yield >85%) fabrication process with only two photolithography steps (two photo masks) while no need for high-resolution and precision alignment for channel definition. Measurement results showed that the vertical channel BC (bottom contact) devices have compatible performance with planar BC devices. However, vertical channel TC transistors showed improved performance with double field effect mobilities and three times larger current ON/OFF ratios than vertical channel BC devices. |
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