Improved electrical stability and UV emission of zinc oxide thin films prepared by combination of metalorganic chemical vapor deposition technique and post-deposition hydrogen doping期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Improved electrical stability and UV emission of zinc oxide thin films prepared by combination of metalorganic chemical vapor deposition technique and post-deposition hydrogen doping

Affiliation:	1. CQM-UMa, Centro de Química da Madeira, Centro de Ciências Exactas e da Engenharia da Universidade da Madeira, Campus Universitário da Penteada, 9000-390 Funchal, Portugal;2. Faculdade de Medicina da Universidade de Coimbra, Azinhaga de Santa Comba, Celas, 3000-548 Coimbra, Portugal;3. Instituto Nacional de Medicina Legal e Ciências Forenses, I.P., Delegação Centro, Largo da Sé Nova, 3000-213 Coimbra, Portugal;1. Geo-environmental and Earth Sciences Department, University of Bari “Aldo Moro”, via Orabona 4, 70125 Bari, Italy;2. Interdepartmental Center “Laboratorio di ricerca per la diagnostica dei Beni Culturali”, University of Bari “Aldo Moro”, via Orabona 4, 70125 Bari, Italy;3. Department of Chemistry, University of Bari “Aldo Moro”, via Orabona 4, 70125 Bari, Italy

Abstract:	Fourier transform infrared and photoluminescence spectroscopy provide strong evidence that post-deposition hydrogen doping of polycrystalline zinc oxide (ZnO) thin films improves the resistivity by increasing hydrogen-related shallow donors and hydrogen passivation of native defects. Improvement of the electrical stability and UV emission confirm that post-deposition hydrogen doping is a promising method to achieve high quality ZnO thin films for the use as transparent electrodes and/or UV light emitters in thin-film-based optoelectronic devices.

Keywords:
本文献已被 ScienceDirect 等数据库收录！

设为首页 | 免责声明 | 关于勤云 | 加入收藏