New hole blocking material for green-emitting phosphorescent organic electroluminescent devices |
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| Affiliation: | 1. School of Nano-Advanced Materials and Engineering Research Institute, Department of Chemistry, Gyeongsang National University, Jinju 660-701, Republic of Korea;2. LG Elite, Umeon-Dong, Seoul, Republic of Korea;1. Institute of Polymer Optoelectronic Materials & Devices, State Key Laboratory of Luminescent Materials & Devices, South China University of Technology, Guangzhou 510640, PR China;2. Department of Chemistry & Department of Physics, National University of Singapore, Singapore 117542, Singapore;1. School of Materials Science and Engineering and Tianjin Key Laboratory of Composites and Functional Materials, Tianjin University, Tianjin, 300072, PR China;2. Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072, PR China;3. Key Laboratory of Advanced Ceramics and Machining Technology, Ministry of Education, Tianjin University, Tianjin, 300072, PR China;1. Dipartimento di Scienze e Tecnologie Biologiche Chimiche e Farmaceutiche (STEBICEF), Università degli Studi di Palermo, Via Archirafi 32, 90123 Palermo, Italy;2. 3B’s Research Group - Biomaterials, Biodegradables and Biomimetics, University of Minho, Headquarters of the European Institute of Excellence on Tissue Engineering and Regenerative Medicine, AvePark, Taipas, 4806-909 Guimarães, Portugal;3. IBIM-CNR, Via Ugo La Malfa 153, 90146 Palermo, Italy;4. Institute of Biophysics at Palermo, Italian National Research Council, Via Ugo La Malfa 153, 90146 Palermo, Italy |
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| Abstract: | The new amorphous molecular material, 2,5-bis(4-triphenylsilanyl-phenyl)-1,3,4]oxadiazole, that functions as good hole blocker as well as electron transporting layer in the phosphorescent devices. The obtained material forms homogeneous and stable amorphous film. The new synthesized showed the reversible cathodic reduction for hole blocking material and the low reduction potential for electron transporting material in organic electroluminescent (EL) devices. The fabricated devices exhibited high performance with high current efficiency and power efficiency of 45 cd/A and 17.7 lm/W in 10 mA/cm2, which is superior to the result of the device using BAlq (current efficiency: 31.5 cd/A and power efficiency: 13.5 lm/W in 10 mA/cm2) as well-known hole blocker. The ITO/DNTPD/α-NPD/6% Ir(ppy)3 doped CBP/2,5-bis(4-triphenylsilanyl-phenyl)-1,3,4]oxadiazole as both hole blocking and electron transporting layer/Al device showed efficiency of 45 cd/A and maximum brightness of 3000 cd/m2 in 10 mA/cm2. |
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