(Organic) Switching phenomenon in lateral structures: Tuning by gate voltage |
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| Affiliation: | 1. Center for Nano Science and Technology @PoliMI, Istituto Italiano di Tecnologia, Via Pascoli 70/3, 20133 Milano, Italy;2. Politecnico di Milano, Dip. di Fisica, P.za L. da Vinci 32, 20133 Milano, Italy;3. Politecnico di Milano, Dip. di Elettronica, Informazione e Bioingengeria, P.za L. da Vinci 32, 20133 Milano, Italy;4. Politecnico di Milano, Dip. di Matematica, P.za L. da Vinci 32, 20133 Milano, Italy;5. Dipartimento di Scienza dei Materiali and INSTM, Università di Milano-Bicocca, via Cozzi 53, 20125 Milano, Italy;1. Ankara University, Faculty of Science, Department of Chemistry, Beşevler, 06100 Ankara, Turkey;2. Çanakkale Onsekiz Mart University, Faculty of Sciences and Arts, Department of Chemistry, 17100 Çanakkale, Turkey;1. Department of Physics, Faculty of Science, Arak University, Arak 38156-8-8349, Iran;2. Department of Physics, University of Tehran, North-Kargar Street, Tehran, Iran;1. Institute of Lighting and Energy Photonics, National Chiao-Tung University, Tainan 71150, Taiwan;2. Institute of Photonic System, National Chiao-Tung University, Tainan 71150, Taiwan;3. Department of Biomedical Engineering, Hungkuang University, Taichung City, 43302, Taiwan;4. Department of Chemistry, National Taiwan University, Taipei 10617, Taiwan |
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| Abstract: | We have fabricated devices based on copper phthalocyanine (CuPc) that exhibited electrical bistability and switching phenomenon. Apart from sandwiched structures, coplanar (lateral) electrodes or field-effect transistor structures have also been characterized. The observation of switching and memory phenomenon in lateral structures with Au/Au electrode combination primarily rules out (1) migration of metal ions into the organic materials, (2) metal filament formation through a redox-driven process, and (3) electroreduction of the molecules as possible mechanisms of electrical bistability in CuPc. The existence two conducting state and bistability have been explained in terms of trapping and detrapping of carriers in the molecular layer. Furthermore, the lateral structures show possibilities to tune switching processes through the bias of the base (gate) electrode. |
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