Fine tuning hole injection for high-performance polyfluorene-based blue emitting device by adjusting work function of anode via deposition of CFx layer with proper ionization potential on indium tin oxide |
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| Affiliation: | 1. Smoltek AB, Regnbågsgatan 3, SE-417 55 Gothenburg, Sweden;2. Department of Microtechnology and Nanoscience, Chalmers University of Technology, Kemivägen, SE-412 96 Gothenburg, Sweden;1. Foundation Institute of Chemical Research of Catalonia (ICIQ), Avda. Països Catalans, 16, Tarragona E-43007, Spain;2. Institució Catalana de Recerca I Estudis Avançats (ICREA), Passeig. Lluís Companys, 23, E-08010 Barcelona, Spain;1. Department of Chemical Sciences, Indian Institute of Science Education and Research Kolkata, Mohanpur 741 246, India;2. Department of Chemistry, Indian Institute of Technology Kanpur, Kanpur 208 016, India;3. Departament de Química, Inorgànica/Instituto de Ciencia Molecular (ICMOL), Universitat de València, Polígono de la Coma, s/n, 46980-Paterna, València, Spain;1. M.N. Miheev Institute of Metal Physics, Ural Branch of the Russian Academy of Sciences, S. Kovalevskaya str. 18, 620990 Ekaterinburg, Russia;2. I. Ya. Postovsky Institute of Organic Synthesis, Ural Branch of the Russian Academy of Sciences, S. Kovalevskoi str. 22, 620219 Ekaterinburg, Russia;3. Department of Chemistry, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Republic of Korea;1. Department of Chemistry, RGM Government College, JoginderNagar (Mandi), H.P. -175015, India;2. Department of Chemistry and Centre for Advanced Studies in Chemistry, Panjab University, Chandigarh 160 014, India |
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| Abstract: | By introducing CFx thin film as hole injection layer on top of indium tin oxide (ITO) anode via plasma polymerization of CHF3, the device with poly(9,9-dioctylfluorene) (PFO) as emitting layer, ITO/CFx(35 W)/PFO/CsF/Ca/Al, is prepared. At the optimal C/F atom ratio using the radio frequency power 35 W, the device performance is optimal having the maximum current efficiency 3.1 cd/A and maximum brightness 8400 cd/m2. This is attributed to a better balance between hole and electron fluxes, resulting from a decrease in hole injection barrier as manifested by ultraviolet photoelectron spectroscopy and scanning surface potential microscopy. |
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