金刚石半导体器件的研究进展

金刚石因其优异的物理化学特性，被视为下一代电力电子器件的终极材料，金刚石半导体器件的制备受到了科研工作者的广泛关注。文章对金刚石基二极管、开关器件和边缘终止效应等方面的研究成果进行了概述。着重阐述了金刚石半导体器件的电学特性，尤其是，在500 ℃高温条件下得到高正向电流密度，阻断能力大于10 kV，并展现出长程稳定性的肖特基势垒二极管；在金属半导体场效应晶体管与金属氧化物半导体场效应晶体管上制得阻断电压超过2 kV的开关器件。同时，针对加工技术带来的表面缺陷，详细讨论了金刚石器件的表面终止技术和缺陷对器件性能的影响，并展望了金刚石半导体在肖特基势垒二极管及场效应晶体管等领域的应用前景。

Review of Diamond Semiconductor Devices

Diamond has been widely applied in many semiconductor devices because of its excellent physical and chemical properties. In this paper，the research of diamond-based diodes，switching devices and edge termination effects were briefly summarized with a special emphasis on the electrical characteristics of diamond semiconductor devices. The Schottky barrier diodes with high forward current density，blocking capacity greater than 10 kV and long-term stability were produced at 500 ℃，meanwhile，a switching device with blocking voltage exceeding 2 kV was created on metal semiconductor field-effect transistor and metal oxide semiconductor field-effect transistor. The surface termination technology and the influence of defects on the performance of diamond devices were discussed in detail. The applications of diamond semiconductor in Schottky barrier diode and field-effect transistor were also presented.