| 高速光导开关传输效率的研究 |
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| 引用本文： | 王明华 杨左娅. 高速光导开关传输效率的研究[J]. 光电子．激光, 1992, 3(1): 12-14,40 |
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| 作者姓名： | 王明华 杨左娅 |
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| 作者单位： | 浙江大学(王明华，杨左娅)，浙江大学(王勤) |
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| 摘 要： | 本文报导了在用掺铬半绝缘砷化镓为材料的高速光导开关的制作中采用硅离子注入工艺。直流及瞬态响应特性的测试结果表明:金属电极与介质基片间的接触电阻大大减小,开关的传输效率明显提高,输出电脉冲幅度增加了一个数量级左右。
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| 关 键 词： | 砷化镓 光导开关 传输效率 掺杂 |
The Investigation of Transportation Efficiency of Photoconductive Switches |
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| Wang Minghu,Yang Zhoy,Wang Qing. The Investigation of Transportation Efficiency of Photoconductive Switches[J]. Journal of Optoelectronics·laser, 1992, 3(1): 12-14,40 |
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| Authors: | Wang Minghu Yang Zhoy Wang Qing |
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| Affiliation: | Zhejiang University |
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| Abstract: | Photocondutive switches with microstrios structure were designed and made on semi-insulating Cr-doped GaAs slabs, Si~+ions implantation techniques was used for the first time, The results of measurement showed that the contact resistance between metal electrodes and Cr: GaAs materials was reduced, and the transportation efficiency of photoconductive switches was improved greatly. |
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| Keywords: | GaAs photoconductive switch ion implantation. |
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