A sub-2.0 V BiCMOS logic circuit with a BiCMOS charge pump |
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Authors: | Okamura H. Atsumo T. Takeda K. Takada M. Imai K. Kinoshita Y. Yamazaki T. |
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Affiliation: | Syst. ASIC Div., NEC Corp., Kawasaki; |
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Abstract: | A BiCMOS logic circuit with very small input capacitance has been developed, which operates at low supply voltages. A High-beta BiCMOS (Hβ-BiCMOS) gate circuit which fully utilizes the bipolar transistor features achieves 10 times the speed of a CMOS gate circuit with the same input capacitance and operating at 3.3 V supply voltage. In order to lower the minimum supply voltage of Hβ-BiCMOS, a BiCMOS circuit configuration using a charge pump to pull up the output high level of the BiCMOS gate circuit is proposed. By introducing a BiCMOS charge pump, Hβ-BiCMOS achieves very high speed operation at sub-2.0 V supply voltage. It has also been demonstrated that only a very small number of charge pump circuits are required to drive a large number of Hβ-BiCMOS gate circuits |
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