| 半绝缘砷化镓的热激电流谱测量 |
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| 引用本文： | 王良,郑庆瑜.半绝缘砷化镓的热激电流谱测量[J].现代仪器,2002(2):21-24. |
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| 作者姓名： | 王良 郑庆瑜 |
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| 作者单位： | 天津电子材料研究所,天津,300192 |
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| 摘 要： | 本文介绍了热激电流谱(TSC)测试方法,测量了SI-GaAs材料的TSC特征谱图。并对SI-GaAs的深能级中心的行为进行了初步的分析。
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| 关 键 词： | 热激电流 半绝缘砷化镓 EL2缺陷 |
The measurement of thermally stimulated current in SI-GaAs |
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| Wang Liang Zheng Qingyu.The measurement of thermally stimulated current in SI-GaAs[J].Modern Instruments,2002(2):21-24. |
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| Authors: | Wang Liang Zheng Qingyu |
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| Affiliation: | Tianjin Electronic Materials Research Institute Tianjin 300192 |
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| Abstract: | A introduction to the method of measuring thermally stimulated current (TSC) is presented. The method has been used to measure thermally stimulated current spectroscopy in SI-GaAs.The property of deel trap levels in SI-GaAs is analyzed preliminary. |
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| Keywords: | Thermally stimulated current (TSC) Semi-insulating GaAs EL2 defects |
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