| Abstract: | Perfect and homogeneous mono crystalline silicon wafers, made from Si-crystals, grown by the Czochralski (CZ) or Floatzone (FZ) process, are basis material and substrate for nearly most of all semiconductor devices of modern microeletronic. The growth of Si-crystals with a high degree of perfection and homogeneity requires a highly developed process and equipment technology. In addition, also the requirements for Si-crystals and wafer dimensions are more and more increasing by economic reasons. At the moment, the mainly used standard Si-wafer diameters are 6″ (150 mm) and 8″ (200 mm). The introduction of 300 mm Si-Wafer just takes place now, requiring substantial efforts for process and equipment development, evaluation as well as very high investment costs. The new 300 mm Si-crystal puller generation EKZ 3000 of Leybold systems is an example for the development and evaluation of 300 mm Si-equipment and will be described here more in detail. First experiences and results will be reported. |
