利用Volterra级数的低噪声放大器线性增强设计

针对单级宽带低噪声放大器（LNA）非线性难以定量分析以及难以将电路设计与线性指标联合设计的问题，提出利用Volterra级数和双极非线性模型相结合的方法优化电路线性度。该方法从SiGe双极管非线性模型出发，提取影响线性度的模型参数，并利用维塔里级数和双极管非线性模型导出器件非线性传输函数，推演出其与IIP3的相互关系，量化各个参数的非线性比重，提出优化线性度的电路设计方法。研究结果表明，在1.5-20GHz的宽频工作频带下，单级低噪声放大器的输入和输出均可实现良好的匹配（<-10dB），达到16dB的增益，噪声系数在整个频带下小于3.6dB，IIP3可达-7.73dBm。

Volterra Series-based Linearity Enhancement Design of Low Noise Amplifier

A new circuit-linearity optimization approach combing Volterra series and bipolar non-linear model was proposed.SiGe bipolar non-linear model was introduced and model parameters affecting linearity were extracted. Device non-linear transfer functions were derived using Volterra series and bipolar non-linear model and its relationship with IIP3 was obtained, qualifying corresponding non-linear weight among these parameters. A circuit design method ensuring good linearity was proposed. Results showed that in the operating broad band of 1.5~20 GHz the proposed one-stage LNA can have good input and output matches(less than -10 dB)as well as gain of 16 dB. Noise figure was below 3.6 dB and IIP3 can achieve -7.73 dBm across the whole band.